Structural and Optoelectronic Properties of Polycrystalline CdS Thick Film Prepared by Screen Printing
| Authors | B.Y. Bagul1,2, P.S. Sonawane2, A.Z. Shaikh2, Y.N. Rane3, S.R. Gosavi3 |
| Affiliations |
1Vasantrao Naik Arts, Commerce and Science College Shahada, 425409, M.S., India 2Material Research Laboratory, P.G. Department of Physics, Pratap College, Amalner, 425401, M.S., India 3Material Research Laboratory, C. H. C. Arts, S. G. P. Commerce, and B.B.J.P. Science College, Taloda, 425413, (M.S.) India |
| Е-mail | srgosavi.taloda@gmail.com |
| Issue | Volume 10, Year 2018, Number 5 |
| Dates | Received 15 July 2018; revised manuscript received 21 October 2018; published online 29 October 2018 |
| Citation | B.Y. Bagul, P.S. Sonawane, A.Z. Shaikh, et al., J. Nano- Electron. Phys. 10 No 5, 05018 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(5).05018 |
| PACS Number(s) | 61.72.uj, 77.84.Bw, 85.40.Xx, 73.61.Ga, 51.50. + v |
| Keywords | II-VI semiconductors (3) , Metal chalcogenide, Thick film, Optical properties (22) , Electrical properties (19) . |
| Annotation |
The paper describes structural, optical and electrical properties of CdS thick film prepared by using screen printing method. For the preparation of CdS thick film, powder of CdS nanoparticles was prepared by using chemical precipitation method using cadmium acetate and sodium sulfide as a source of Cd and S respectively. XRD pattern confirms the formation of pure hexagonal CdS phase with crystallite size of the order of 19.41 nm and 21.14 nm respectively, for as prepared and annealed CdS thick films. The surface morphology studies shows that the films covered with spherical grains uniformly distributed over the substrate free from crack and pinholes where as elemental analysis revealed the presence of Cd and S elements in the prepared film. The absorption spectra of as prepared and sintered CdS thick film were recorded by using JASCO V-630 spectrophotometer in the wavelength range of 400-900 nm from which energy band gap has been determined and is found to be 2.47 eV and 2.39 eV for as prepared and sintered CdS thick film, respectively. Electrical analysis showed the semiconducting behavior of the prepared material. |
|
List of References |
Other articles from this number
1) Study of the Structural and Optical Properties of Dy Doped CdS Thin Films Deposited by Close-spaced Vacuum SublimationCdSDy [05001-1-05001-5]2) Formation of Powerful Multiharmonic Electromagnetic Wave by Two Stream Superheterodyne Klystron Free Electron Laser with Helical Electron Beam [05002-1-05002-8]
3) Molybdenum Disulfide Obtained by Template Method as an Electrode Material in Electric Energy Storage Devices [05003-1-05003-4]
4) Tribological Study of Molybdenum Nitrides Under the Effect of Vanadium [05004-1-05004-7]
5) Magnetic studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles [05005-1-05005-5]
6) Effects of Oxygen Interaction with PbTe Surface and Their Influence on Thermoelectric Material Properties [05006-1-05006-5]
7) Features of Photoacoustic Response Formation in Systems with Interface [05007-1-05007-4]
8) A Perspective on Zinc Oxide Based Diluted Magnetic Semiconductors [05008-1-05008-5]
9) The Effect of the Fractal Guest Subsystem on the Structure, Heat Capacity and Impedance Response of InSe Crystals Intercalated with Nickel [05009-1-05009-5]
10) Influence of Deposition Conditions of Thin Polymer Films in Vacuum on Their Dielectric Properties [05010-1-05010-6]
11) Influence of Annealing on the Structure of Ultrathin Gold Films on the Surface of Glass and CdS Substrates [05011-1-05011-6]
12) Computer Simulation on the Behavior of the TCO/n-a-Si:H Interface Solar Cells [05012-1-05012-4]
13) Development of Technology for Obtaining N4HNO3 Multilayer Granules with Nanostructured Porous Layers [05013-1-05013-4]
14) Investigation and Design of Novel Comparator in Quantum-dot Cellular Automata Technology [05014-1-05014-4]
15) Charge Based Quantization Model for Triple-Gate FINFETS [05015-1-05015-5]
16) Optical Characterization of Thin Films Poly (Ethylene Oxide) Doped with Cesium Iodide [05016-1-05016-4]
17) Long-range Passivation of Phosphorus Impurity Atoms by Pb-centers and the Emergence of Barriers for Electrons in n-type Porous Silicon [05017-1-05017-6]
18) The Experimental Structure of a Wall Turbulent Flow under the Action of Thermal Radiation from a CO2-laser [05019-1-05019-5]
19) Fabrication of Room Temperature NO2 Gas Sensor based on Silver Nanoparticles-Decorated Carbon Nanotubes [05020-1-05020-6]
20) Nano Silicon Carbide’s Stacking Faults, Deep Level’s and Grain Boundary’s Defects [05021-1-05021-6]
21) Empirical Regularities of Change in Dynamic, Acoustic, Structural, Optical and Colorimetric Characteristics of Ionic Crystals with Debye Temperature [05022-1-05022-5]
22) A Simple Sonochemical Synthesis of Nanosized ZnO from Zinc Acetate and Sodium Hydroxide [05023-1-05023-4]
23) Circulation of the Reactive Energy of the Near Field of an Electric Dipole and its Transformation into the Active Energy of the Radiation Field [05024-1-05024-8]
24) Scandium-silicon Multilayer X-ray Mirrors with CrB2 Barrier LayersScSiCrB [05025-1-05025-6]
25) Structure and Electrophysical Properties of Double-component Film Alloys Based on Molybdenum and Iron or Nickel [05026-1-05026-4]
26) About Coherent Electron Transport in Nanocontacts “Nb – DNA – Nb” [05027-1-05027-5]
27) Electrical Properties of Heterostructures n-TiN/p-Cd3In2Te6 [05028-1-05028-5]
28) Optimize the Geometrical Parameters of Interdigital Micro-Electrodes Used in Bioimpedance Sensing System [05029-1-05029-4]
29) Entropy Evaluation of the Laser Cooling Process [05030-1-05030-5]
30) A Method of Minority Charge Carriers Basic Parameters Determination in Solid Matter [05031-1-05031-5]
31) Comparison of Piezoelectric and DC Motor Control Principles [05032-1-05032-4]
32) Oscillatory Magnetic Dynamics of a Nanoparticle Driven by an External field and Spin-polarized Current [05033-1-05033-5]
33) Structural and Electrical Properties of AgSbSe2 Thin Films with the Inclusion of Lead Chalcogenides [05034-1-05034-4]
34) Boosting CZTSSe Solar Cell Efficiency by Back Surface Field Layer [05035-1-05035-5]
35) The Electronic Band Structure of the BaSnO3 and SrSnO3 Perovskites Calculated within the GGA and GW Approaches [05036-1-05036-5]
36) Configurable Nanocircuits with Majority Logic [05037-1-05037-5]
37) Dip Coated ZnO Films for Transparent Window Applications [05038-1-05038-5]
38) Elemental-phase and Structural Investigations of the Polycrystalline Surfaces of β-Ga2O3-SnO2 System Compounds [05039-1-05039-8]
39) Determination of the Grüneisen Parameter and the Explicit Part of the Anharmonicity of the Cu-Ni System by the X-ray Method [05040-1-05040-4]
40) (TiZr)N/(TiSi)N Maitilayer Nanostructured Coatings obtained by Vacuum Arc Deposition [05041-1-05041-5]
41) Doped СNTs for Removal and Monitoring of Li, Na, K, Zn, Cd, Hg Chromate Molecular Complexes: a DFT Computational Study [05042-1-05042-7]
42) Study of Ethylene Vinyl Acetate (EVA) Films used in Photovoltaic Modules [05043-1-05043-3]
43) Investigation of Absorber Layer Thickness Effect on CIGS Solar Cell in Different Cases of Buffer Layers [05044-1-05044-2]
44) Electrical Performance of CuInSe2 Solar Panels Using Ant Colony Optimization Algorithm [05045-1-05045-3]
45) Influence of the Bias Potential and the Pressure of the Nitrogen Atmosphere on the Structure and Properties of Vacuum-arc Coatings Based on the AlCrTiZrNbV High-entropy Alloy [05046-1-05046-5]
