Nano Silicon Carbide’s Stacking Faults, Deep Level’s and Grain Boundary’s Defects
| Authors | S.I. Vlaskina1, G.S. Svechnikov2, G.N. Mishinova3, V.I. Vlaskin4, V.E. Rodionov5, V.V. Lytvynenko6 |
| Affiliations |
1Yeoju Institute of Technology (Yeoju University), 338, Sejong-ro, Yeoju-eup, Yeoju-gun, Gyeonggi-do,469-705 Korea, 2National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”,37, Peremohy Ave., Kyiv, Ukraine, 3Taras Shevchenko Kyiv National University, 64, Volodymyrs’ka Str., 01033 Kyiv, Ukraine 4H&P Corp. Techno 2-ro, 119 Yongsan-dong 516-1, 34024 Daejeon, Korea 5State Institution "Institute of Environmental Geochemistry, NAS of Ukraine",34A, Academician Palladin Ave., Kyiv, Ukraine 6Institute of Electrophysics and Radiation Technologies NAS of Ukraine, p.o. box. 8812, 28, Chernyshevskiy Str., 61002 Kharkiv, Ukraine |
| Е-mail | |
| Issue | Volume 10, Year 2018, Number 5 |
| Dates | Received 05 September 2018; revised manuscript received 22 October 2018; published online 29 October 2018 |
| Citation | S.I. Vlaskina, G.S. Svechnikov, G.N. Mishinova, et al., J. Nano- Electron. Phys. 10 № 5, 05021 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(5).05021 |
| PACS Number(s) | 78.20. – e, 78,55.m, 78.67.Bf |
| Keywords | Silicon carbide (9) , Polytype, Stacking fault, Photoluminescence spectra. |
| Annotation |
In this work, photoluminescence spectra of SiC crystals with ingrown original defects are analised It was shown that stalking fault and deep level luminescence spectra reflect the fundamental logic of the SiC polytype structure .The analysis of the zero- phonon spectra of the stalking fault, deep level, and grain boundary parts of the photoluminescence spectra makes it possible to control the processes of phase transformations within the growth process of crystals and films, as well as during the technological operations. Moreover, it makes it possible in nanostructures of silicon carbide. to determine the position or displacement of atoms participating in the photoluminescence with an accuracy of 0.0787 Angstrom (or 1.075 meV) |
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