Structural and Electrical Properties of AgSbSe2 Thin Films with the Inclusion of Lead Chalcogenides
| Authors | Y.V. Tur1 , I.S. Virt1 , 2 |
| Affiliations |
1Drohobych State Pedagogical University, 3, Stryiska Str., 82100 Drohobych, Ukraine 2University of Rzeszow, 1, S. Pigon Str., 35310 Rzeszow, Poland |
| Е-mail | |
| Issue | Volume 10, Year 2018, Number 5 |
| Dates | Received 22 July 2018, revised manuscript received 22 October 2018, published online 29 October 2018 |
| Citation | Y.V. Tur, I.S. Virt, J. Nano- Electron. Phys. 10 No 5, 05034 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(5).05034 |
| PACS Number(s) | 73.50.Lw, 84.60.Pb |
| Keywords | Chalcogenides metals, Thin films (60) , Structure (105) , Electrical properties (19) . |
| Annotation |
The results of experimental investigation of structural and electrical properties of AgSbSe2 films are presented in this work. The films of AgSbSe2 of different thickness were obtained on Al2O3, glass and KCl substrates in vacuum of 1 × 10 – 4 Pa by the pulsed laser deposition method. The parameters of the crystal structure of thin films are determined by X-ray diffractometry and low-energy electrons diffraction of (LEED). Depending on the growth temperature of the film there is a transition from crystalline to fine polycrystalline (amorphous) structure. The temperature behaviour of the electrical conductivity and the acceptor level is determined. |
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List of References English version of article |
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