Electrical Properties of Heterostructures n-TiN/p-Cd3In2Te6

Authors E.V. Maistruk , T.T. Kovaliuk, M.M. Solovan , P.D. Marianchuk

Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubyns'kogo Str., 58012 Chernivtsi, Ukraine

Issue Volume 10, Year 2018, Number 5
Dates Received 10 July 2018, revised manuscript received 22 October 2018, published online 29 October 2018
Citation E.V. Maistruk, T.T. Kovaliuk, M.M. Solovan, P.D. Marianchuk, J. Nano- Electron. Phys. 10 No 5, 05028 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05028
PACS Number(s) 73.61.Ph, 78.40.Fy
Keywords Thin film (101) , Heterostructure (7) , Charge transport mechanisms, TiN (97) , Cd3In2Te6.

Heterostructures n-TiN/p-Cd3In2Te6 was fabrication by reactive magnetron sputtering thin films titanium nitride on substrates with crystal p-Cd3In2Te6. Investigated kinetic properties of Cd3In2Te6 crystals and also dark current-voltage characteristics of a heterostructures n-TiN/p-Cd3In2Te6 in the temperature range T = 295-347 K. It was established that the main transfer mechanisms in the forward bias is a generation-recombination current transfer mechanism involving surface states at the interface between the n-TiN / p-Cd3In2Te6 and tunneling, under reverse bias - tunneling.

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