Electrical Properties of Heterostructures n-TiN/p-Cd3In2Te6
| Authors | E.V. Maistruk , T.T. Kovaliuk, M.M. Solovan , P.D. Marianchuk |
| Affiliations |
Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubyns'kogo Str., 58012 Chernivtsi, Ukraine |
| Е-mail | |
| Issue | Volume 10, Year 2018, Number 5 |
| Dates | Received 10 July 2018, revised manuscript received 22 October 2018, published online 29 October 2018 |
| Citation | E.V. Maistruk, T.T. Kovaliuk, M.M. Solovan, P.D. Marianchuk, J. Nano- Electron. Phys. 10 No 5, 05028 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(5).05028 |
| PACS Number(s) | 73.61.Ph, 78.40.Fy |
| Keywords | Thin film (101) , Heterostructure (7) , Charge transport mechanisms, TiN (97) , Cd3In2Te6. |
| Annotation |
Heterostructures n-TiN/p-Cd3In2Te6 was fabrication by reactive magnetron sputtering thin films titanium nitride on substrates with crystal p-Cd3In2Te6. Investigated kinetic properties of Cd3In2Te6 crystals and also dark current-voltage characteristics of a heterostructures n-TiN/p-Cd3In2Te6 in the temperature range T = 295-347 K. It was established that the main transfer mechanisms in the forward bias is a generation-recombination current transfer mechanism involving surface states at the interface between the n-TiN / p-Cd3In2Te6 and tunneling, under reverse bias - tunneling. |
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List of References English version of article |
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