Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences

Authors	V.G. Kosushkin¹ , S.L. Kozhitov² , S.G. Emelyanov³ , Yu.N. Parkhomenko² , L.V. Kozhitov²
Affiliations	¹ Bauman Moscow State Technical University (Branch in Kaluga), 2, Bazhenov Str., 248000 Kaluga, Russia ² National University of Science and Technology MISIS, 4, Leninskii Pr., 119049 Moscow, Russia ³ Southwest State University, 94, 50 let Oktyabrya, 305040 Kursk, Russia
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Issue	Volume 6, Year 2014, Number 3
Dates	Received 19 May 2014; published online 15 July 2014
Citation	V.G. Kosushkin, S.L. Kozhitov, S.G. Emelyanov, et al., J. Nano- Electron. Phys. 6 No 3, 03043 (2014)
DOI
PACS Number(s)	61.48.De, 81. – b
Keywords	Crystal growth (2) , Ultrasonic vibration (2) , Homogeneity (4) .
Annotation	The influence of ultrasound introduced into the melt during the growth of single crystals of gallium arsenide. Ultrasonic vibrations had a frequency of 820 kHz and amplitude of 0.1-0.2 micrometer. Found an increase in the homogeneity of impurity distribution of the bands growth without change of the dislocation structure of single crystals. In the simulation result of the ultrasonic wave interaction with the melt in the crucible on the basis of the theory of formation of phases is established that nucleation rate associated with the frequency and amplitude of the ultrasonic vibration acting on the melt.
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