On the Applicability of HF and μ-PCD Methods for Determination of Carrier Recombination Lifetime in the Non-passivated Single-crystal Silicon Samples
| Authors | I.М. Anfimov, S.P. Kobeleva , I.V. Schemerov , M.N. Orlova |
| Affiliations | National University of Science and Technology “MISiS”, 4, Leninsky Pr., 119049 Moscow, Russia |
| Е-mail | |
| Issue | Volume 6, Year 2014, Number 3 |
| Dates | Received 19 May 2014; published online 15 July 2014 |
| Citation | I.М. Anfimov, S.P. Kobeleva, I.V. Schemerov, M.N. Orlova, J. Nano- Electron. Phys. 6 No 3, 03018 (2014) |
| DOI | |
| PACS Number(s) | 81.05.Dz |
| Keywords | Single-crystal silicon, Contactless μ-PCD method, Carrier recombination lifetime, Photoconductivity decay. |
| Annotation | Comparison of the results of measuring the carrier recombination lifetime in silicon single crystals by contactless HF and microwave μ-PCD methods was carried out. It has been shown that HF method gives a large error compared with a μ-PCD method. |
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List of References |
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