RF Magnetron Sputtering of Silicon Carbide and Silicon Nitride Films for Solar Cells

Authors	V.S. Zakhvalinskii¹ , E.A. Piljuk¹ , I.Yu. Goncharov¹ , V.G. Rodriges¹, A.P. Kuzmenko² , S.V. Taran¹ , P.A. Abakumov²
Affiliations	¹ Belgorod National Research University, 85, Pobedy Str., 308015 Belgorod, Russia ² South-West State University, 94, 50 LetOctyabtyastr Str., Kursk, Russia
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Issue	Volume 6, Year 2014, Number 3
Dates	Received 19 May 2014; published online 15 July 2014
Citation	V.S. Zakhvalinskii, E.A. Piljuk, I.Yu. Goncharov, et al., J. Nano- Electron. Phys. 6 No 3, 03062 (2014)
DOI
PACS Number(s)	61.10.Eq
Keywords	Atomic force microscopy (9) , RF- magnetron sputtering, Silicon carbide (9) , Silicon nitride (2) , Thin films (60) , Solar cells (17) .
Annotation	RF-magnetron nonreactive sputtering method from solid-phase target in argon atmosphere was used for obtaining thin silicon carbide and silicon nitride films, that are used for constructing solar cells based on substrates of single crystal silicon of p-type.
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