Автори | Majid S. Al-Ruqeishi, Tariq Mohiuddin |
Афіліація | Department of Physics, College of Science, Sultan Qaboos University, P.O. Box 36 P.C. 123, Al-Khoudh, Sultanate of Oman |
Е-mail | majidruq@squ.edu.om |
Випуск | Том 8, Рік 2016, Номер 2 |
Дати | Одержано 09.02.2016, опубліковано online - 21.06.2016 |
Цитування | Majid S. Al-Ruqeishi, Tariq Mohiuddin, J. Nano- Electron. Phys. 8 No 2, 02001 (2016) |
DOI | 10.21272/jnep.8(2).02001 |
PACS Number(s) | 61.46.Bc, 61.46.Hk, 61.46.Km |
Ключові слова | Carbo-thermal technique, SiC Nanowires, Nano-Optics. |
Анотація | β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires. |
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