Performance Enhancement of an InAs Source/Pocket Dual-Source Trench Gate Tunnel Field-Effect Transistor Using an HfO2 Filled Cavity: A TCAD Investigation
| Authors | R. Kiruthika1, S. Ashok Kumar1, J. Charles Pravin2 |
| Affiliations |
1Department of ECE, Karpagam Academy of Higher Education, Tamil Nadu, India 2Department of ECE, Kalasalingam Academy of Research and Education, Tamilnadu, India |
| Е-mail | 6691ashok@gmail.com |
| Issue | Volume 18, Year 2026, Number 5 |
| Dates | Received 24 April 2026; revised manuscript received 23 October 2026; published online 28 October 2026 |
| Citation | R. Kiruthika, S. Ashok Kumar, J. Charles Pravin, J. Nano- Electron. Phys. 18 No 5, 05017 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(5).05017 |
| PACS Number(s) | 07.05.Tp, 85.30.Tv |
| Keywords | TFET (18) , InAs (3) , DSTGTFET, BTBT (2) , TCAD (19) . |
| Annotation |
Tunnel field-effect transistors (TFETs) are widely recognized as potential alternatives to conventional MOSFETs for low-power applications because they exhibit ultra-low leakage current and excellent subthreshold performance. However, the large bandgap of silicon suppresses the BTBT rate at the source-channel junction, thereby restricting the achievable ON-state current. This work proposes an InAs-based Dual-Source Trench Gate Tunnel Field-Effect Transistor (DSTGTFET) in which the silicon sources and pocket are replaced with Indium Arsenide (InAs), and the conventional air cavity is filled with HfO2. The device was designed and evaluated using Synopsys Sentaurus TCAD with the models drift–diffusion transport model, dynamic non-local Kane BTBT model, Shockley–Read–Hall (SRH) recombination, Fermi–Dirac statistics, bandgap narrowing, and mobility degradation. The influence of HfO2 cavity thickness was investigated by varying it from 4 nm to 13 nm. The optimized device with a 9 nm cavity achieved an ON-state current of 6.5 10 – 5 A, an OFF-state current of 3.27 10 – 16 A, and an ION/IOFF ratio of approximately 2 10 11. The threshold voltage was reduced from 0.75 V to 0.69 V, indicating improved switching characteristics. The enhanced performance is attributed to the combined effect of the InAs source/pocket and the HfO2-filled cavity, which improve carrier tunneling and gate control. These results demonstrate the suitability of the proposed device for future low-power and high-performance integrated circuit applications. |
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