Light Emitters Based on ZnO:Mg Heterolayers
| Authors | M.M. Slyotov1, O.M. Slyotov1, O.V. Kinzerska1, T.M. Mazur2, M.P. Mazur2 |
| Affiliations |
1Yuri Fedkovich Сhernivtsi National University, Chernivtsi, Ukraine 2Ivano-Frankivsk National Technical University of Oil and Gas, Ivano-Frankivsk, Ukraine |
| Е-mail | myroslav.mazur@nung.edu.ua |
| Issue | Volume 18, Year 2026, Number 5 |
| Dates | Received 07 November 2025; revised manuscript received 23 October 2026; published online 28 October 2026 |
| Citation | M.M. Slyotov, O.M. Slyotov, O.V. Kinzerska, et al., J. Nano- Electron. Phys. 18 No 5, 05036 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(5).05036 |
| PACS Number(s) | 61.43.Gt, 68.37.Ps, |
| Keywords | Light emitters, Zinc oxide (10) , Isovalent magnesium impurity, Recombination (3) . |
| Annotation |
The possibility of obtaining light emitters on ZnO:Mg heterostructures has been established. In these structures, high radiation intensity is created as a result of preliminary doping of ZnSe substrates with an isovalent Mg impurity. ZnO:Mg was grown by isovalent substitution of Zn anions with oxygen at temperatures of 950-1050 °C. This results in the formation of heterostructures with intense radiation in the short-wave region Δλ ≈ 0.36-0.42 m with a maximum at 0.38 m. Preliminary doping of the base material with an isovalent Mg impurity causes a significant increase in the quantum efficiency of ZnO radiation to η ≈ 20-25 %. It has been established that it is formed by the annihilation of bound excitons, recombination through local Mg energy states, and intense interband recombination. |
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