Design and Simulation of Cobalt/Nickel Functionalized a-IGZO Thin-Film Transistor for Enhanced Gas Sensing Applications
| Authors | B. Mohan1, V. Sandeep2, P. Harikrishnan3, G. Jayahari Prabhu4 |
| Affiliations |
1P.S.R. Engineering College, Department of ECE, Tamil Nadu, India 2Mangalore Institute of Technology and Engineering, Department of ECE, Mangalore, India 3Kalasalingam Academy of Research and Education, Department of ECE, Tamil Nadu, India 4AAA College of Engineering and Technology, Department of ECE, Tamil Nadu, India |
| Е-mail | mohan.me.ae@gmail.com |
| Issue | Volume 18, Year 2026, Number 5 |
| Dates | Received 14 June 2026; revised manuscript received 22 October 2026; published online 28 October 2026 |
| Citation | B. Mohan, V. Sandeep, et al., J. Nano- Electron. Phys. 18 No 5, 05001 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(5).05001 |
| PACS Number(s) | 85.30.Tv, 85.75.Hh |
| Keywords | Thin-Film Transistor, Cobalt/Nickel sensing layer, a-IGZO, Drain current (3) , Threshold voltage shift. |
| Annotation |
This study presents the design and TCAD simulation of a thin-film transistor (TFT) structure for gas sensing applications, utilizing a multilayer material configuration. The proposed device incorporates a Cobalt/Nickel-functionalized sensing layer integrated within a back-gated amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT architecture, supported by a SiO2 dielectric and a silicon substrate. The objective is to improve selectivity, sensitivity, and operational stability for gas detection. Simulation results demonstrate that the proposed Co/Ni-functionalized a-IGZO TFT achieves a threshold voltage (Vth) of 0.58 V, a subthreshold swing (SS) of 80 mV/dec, and an ION/IOFF ratio of 2.56 103. The maximum drain current (IDmax) reaches 11.5 A under VGS 3 V bias condition. Compared to Palladium (Vth = 1.1 V), Cobalt (Vth = 0.58 V) achieves a 47 % reduction in threshold voltage, enabling lower-power operation. The a-IGZO channel provides enhanced carrier mobility and improved bias-stress stability compared to conventional oxide semiconductors. The gas sensing mechanism is modeled through work-function modulation at the metal-semiconductor interface upon gas adsorption. This investigation demonstrates that Co/Ni-functionalized a-IGZO TFTs offer broader gas detection capability than conventional Pd-based sensors, with potential applications in environmental monitoring, industrial safety, and portable sensing systems. |
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