Benchmarking Performance of a Double Gate CNTFET Against the GNRFET with Schottky Contact

Graphene Nano Ribbon Field Effect Transistor (GNRFET) and Carbon Nano Tube (CNTFET) are emerging technologies that have received a lot of attention in recent years. They are being extensively investigated as possible candidates for replacing silicon-channel devices in the next-generation integrated circuits and systems. Both devices represent attractive physical properties for electronic applications and can be used to overcome the different physical limits and several drawbacks, including high leakage current (IOFF), short-channel effects (SCEs), and increase of the threshold voltage (VTH) and velocity saturation.The effect of the lateral spacing parameter on the reliability of the device is necessary to be considered because it directly dictates the parasitic capacitances. In this paper, we compare the two varieties of both de-vices and explore their respective strengths in terms of the leakage current (IOFF) and the ION current using the Schottky contact. The numerical modeling is performed using the non-equilibrium Green's function formalism (NEGF) to describe quantum transport in both devices. The 3D quantum simulation study covers transfer characteristics, transconductance, potential profiles, and transmission coefficients used to extract the performance ratio using the Nano TCAD Vides tool. The novelty of this paper is to present a better de-vice performance using the lateral spacing parameter optimization on both devices. The results of this simulation confirm that increasing the lateral spacing parameter in-creases the ION current by 15.2 % and 4.20 % for CNTFET and GNRFET, respectively. The study of this paper reveals that the CNTFET device is more attracted to designing the speed CMOS circuit with lower power consumption under optimal parameters presented here.