Heteroepitaxy Growth of SiC on the Substrates of Porous Si Method of Substitution of Atoms

Authors V.V. Kidalov1 , S.A. Kukushkin2, 3 , 4 , 5 , A.V. Osipov2, A.V. Redkov2, A. S. Grashchenko2, I.P. Soshnikov5, 6 , M.E. Boiko6, M.D. Sharkov6, A.F. Dyаdenchuk1
Affiliations

1Berdyansk State Pedagogical University, 4, Shmidt Str., 71100 Berdyansk, Ukraine

2Institute of Problems of Mechanical Engineering, 61, Bolshoj Pr., 199178 Vas. Ostrov, St. Petersburg, Russia

3ITMO University, 49, Kronversky Pr., 197101 St. Petersburg, Russia

4Herzen State Pedagogical University of Russia, 48, Moika Nab., 191186 St. Petersburg, Russia

5Saint Petersburg National Research Academic University, 8/3 Khlopin, 194021 St. Petersburg, Russia

6Ioffe Institute, 26, Politekhnicheskaya, 194021 St. Petersburg, Russia

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Issue Volume 10, Year 2018, Number 3
Dates Received 26 March 2018; published online 25 June 2018
Citation V.V. Kidalov, S.A. Kukushkin, A.V. Osipov, et al., J. Nano- Electron. Phys. 10 No 3, 03026 (2018)
DOI https://doi.org/10.21272/jnep.10(3).03026
PACS Number(s) 78.30Fs, 78.55m, 61.43Gt, 81.65.Cf
Keywords Method of substitution of atoms, Porous buffer layer, SiC (25) , Porous Si (5) , Si (539) , Epitaxial film, 3C-SiC (2) .
Annotation

In this paper, the properties of silicon carbide films obtained on porous silicon substrates by the substitution method of atoms are considered. Silicon carbide films are obtained on macroporous Si (100) substrates, and porous surfaces «envelop». This structure can find application in the manufacture of electrodes for supercapacitors. Polycrystalline 3C-SiC silicon carbide films with a grain size of 27 nm were obtained on mesoporous Si (100) substrates. Single-crystal epitaxial 3C-SiC silicon carbide films obtained on mesoporous Si (111) substrates have a small contact area between Si and SiC and can effectively «untie» mechanical stresses arising from differences in the thermal expansion coefficients and parameters of the silicon and silicon carbide lattice. It was found that the presence of pores in the near-surface Si layers leads to considerable stress relaxation in SiC films, which opens the way to the growth of thick GaN layers on the SiC/porous-Si/Si template.

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