Numerical Simulation of SnS-Based Solar Cells

Authors M.M. Ivashchenko1 , A.S. Opanasyuk2 , I.P. Buryk1 , D.V. Kuzmin1

1Konotop Institute, Sumy State University, 24, Myru Ave., 41615 Konotop, Ukraine

2Sumy State University, 2, Rimsky-Korsakov Str., 40007 Sumy, Ukraine

Issue Volume 10, Year 2018, Number 3
Dates Received 09 April 2018; published online 25 June 2018
Citation M.M. Ivashchenko, A.S. Opanasyuk, I.P. Buryk, D.V. Kuzmin, J. Nano- Electron. Phys. 10 No 3, 03004 (2018)
PACS Number(s) 85.60.Bt, 78.20.Bh, 73.61.Ga
Keywords Solar cell (51) , Simulation (35) , Fill factor (2) , Efficiency (24) , SCAPS (25) .

In this paper it was carried out the numerical simulation of the main working parameters (light current-voltage curves, quantum yield spectral distributions) of SnS-based (SnS/SnS2/ITO, SnS/ZnS/ITO) solar cells (SCs) using the SCAPS-3102 simulation package. Using the basis input simulation parameters such as wide band gap Eg,, layers thicknesses d, electron affinities (, etc. there were estimated the next SCs characteristics: open-circuit voltages UOC, short-circuit current densities JSC, fill-factors FF and their efficiencies (. These data allows us to estimate the optimal constructive parameters of simulated SCs.

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