Long-range Interaction between pb-centers andNO2 Molecules Adsorbed on the Silicon Surface

Authors F. Ptashchenko

National University “Odesa Maritime Academy”, 8, Didrikhson Str., 65029 Odesa, Ukraine

Е-mail fed.ptas@gmail.com
Issue Volume 10, Year 2018, Number 3
Dates Received 11 March 2018, published online 25 June 2018
Citation F. Ptashchenko, J. Nano- Electron. Phys. 10 No 3, 03019 (2018)
DOI https://doi.org/10.21272/jnep.10(3).03019
PACS Number(s) 68.43.Bc, 82.65._r
Keywords DFT calculations, Porous silicon (3) , Adsorption (9) , NO2 (14) .

11 March 201825 June 2018DFT calculations showed that the interaction between adsorbed nitric oxide (NO2) molecules (or N2O4 dimers) and distant pb-centers (Si atoms with dangling bonds) can occur through a Si or SiO2 layer. This interaction is effective only when NO2 is fixed on surface OH groups. In this interaction, the pb-center charges positively, which causes an additional Coulomb blockade (CB) of the holes and can explain the decrease in the conductivity of low-doped p-type porous silicon (PS) samples.

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