Transmitting Coefficient and Quasi-Stationary States of Electron in Symmetric Double-Barrier Nanostructure with Position-Dependent Potential and Effective Mass

Authors Ju.O. Seti , M.V. Tkach
Affiliations

Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubinsky Str., 58012 Chernivtsi, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 3
Dates Received 22 April 2018; revised manuscript received 04 June 2018; published online 25 June 2018
Citation Ju.O. Seti, M.V. Tkach, J. Nano- Electron. Phys. 10 No 3, 03021 (2018)
DOI https://doi.org/10.21272/jnep.10(3).03021
PACS Number(s) 78.67.De, 63.20.Dj, 63.22. + m
Keywords Position-dependent effective mass, Position-dependent potential energy, Resonant tunneling nanostructure, Quasi-stationary state, Transmitting coefficient.
Annotation

The exact solutions of Schrodinger equation are obtained within the model of position-dependent electron effective mass and potential energy, which linearly  depends on coordinate in near-interface region between the wells and barriers of open symmetrical double-barrier resonant tunneling structure. The transmitting coefficient of nanostructure with In0.53Ga0.47As wells and In0.52Al0.48As barriers, the resonance energies and resonance widths of electron quasi-stationary states are calculated using these solutions. The influence of the sizes of near-interface regions on the spectral parameters of electron quasi0stationary states is studied. The obtained dependences are compared with the results of the most spread model of electron effective mass and potential, which are the step-like functions of coordinate being abrupt at the interfaces of nanostructure.

List of References