Formation of Graded-Gap Active Region of the Photoelectric Converter Based on Algaas Solid Solutions by Trimethylaluminium Flow Modulation in the MOC Vapour Deposition Method

Authors S.I. Krukovskyi1,2, H.A. Ilchuk2 , R.S. Krukovskyi1,2, I.V. Semkiv2, E.O. Zmiiovska2, S.V. Tokarev2
Affiliations

1“ELECTRON-CARAT” Scientific-Research Company, 202, Stryysyka Str., 79031 Lviv, Ukraine

2Lviv Polytechnic National University, 12, S. Bandera Str., 79013 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 3
Dates Received 14.02.2018, published online 25.06.2018
Citation S.I. Krukovskyi, H.A. Ilchuk, R.S. Krukovskyi, et al., J. Nano- Electron. Phys. 10 No 3, 03025 (2018)
DOI https://doi.org/10.21272/jnep.10(3).03025
PACS Number(s) 61.72.uj, 73.61.Ey, 81.15.Gh
Keywords AlGaAs (5) , Metalorganic chemical vapour deposition (MOCVD), Graded-Gap Structure.
Annotation

nAlGaAsGaAsnThe method of formation of nGaAs\рAlGaAs\р+GaAs heterostructure by the MOC vapour deposition method in the temperature range of 630-700 °С is presented. The investigation of the charge carrier concentration dependence on the thickness of the n-GaAs epitaxial layers doped with silicon and AlAs concentration dependence on the thickness of the AlxGa1-xAs solid solution layer was carried out. The high structural perfection of the obtained epitaxial layers of the graded-gap structure is shown. A solar cell with an 1 см2 active area is created. It is shown that the value of the efficiency coefficient ( = 25,37 %) of the obtained solar elements is higher than this one for solar elements based on GaAs.

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