Structure and Electrical Properties of Thin Films ofPure and Bismuth-Doped Lead Telluride

Authors D.M. Freik , B.S. Dzundza , M.A. Lopyanko, Ya.S. Yavorsky , A.I. Tkachuk, R.B. Letsyn
Affiliations

Vasyl Stefanyk PreCarpathian National University 57, Shevchenko Str., Ivano-Frankivsk 76025, Ukraine

Е-mail freik@pu.if.ua
Issue Volume 4, Year 2012, Number 2
Dates Received 31 October 2011; published online 08 May 2012
Citation D.M. Freik, B.S. Dzundza, M.A. Lopyanko, et al., J. Nano-Electron. Phys. 4 No 2, 02012 (2012)
DOI
PACS Number(s) 3.50.Lw, 73.63.Bd
Keywords Lead telluride, Doping (18) , Thin film (96) , Thermoelectric properties (3) .
Annotation The electrical properties of thin films obtained by deposition in vacuum of the pair of PbTe on the substrates of polyamide tape and PbTe:Bi on fresh cleavages of (0001) mica-muscovite under different processing conditions, as well as their subsequent exposure to air, are studied. The high temporal stability of the films on air is revealed.

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