Formation Features of the Porous Silicon Layers Modified by НСl and HBr in the Context of Optical Properties
| Authors | Е.I. Zubko |
| Affiliations | Zaporozhye State Engineering Academy, 22, Dobrolubova Str., Zaporozhye 69000, Ukraine |
| Е-mail | evgeniya-zubko@mail.ru |
| Issue | Volume 4, Year 2012, Number 2 |
| Dates | Received 23 December 2011; revised manuscript received 20 May 2012, published online 04 June 2012 |
| Citation | Е.I. Zubko, J. Nano- Electron. Phys. 4 No 2, 02036 (2012) |
| DOI | |
| PACS Number(s) | 78.20. – е |
| Keywords | Porous silicon (3) , Modification (7) , Photoanodizing, Reflection (7) . |
| Annotation | Transmission and reflection spectra, refraction factor of the porous silicon layers produced in HF(48%): HCl:H2O and HF(48%):HBr:H2O solutions are investigated by the sample illumination and without it. It is established that layers produced by electrolytic anodizing in HF(48%):HBr:H2O = 16:2:80 mass% solution have the best antireflective characteristics and smaller optical transmission than other samples. |
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List of References |
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