Surface Topology of p-InSe and n-SnS2-xSex (0 ≤ x ≤ 1) Layered Crystals and Heterojunctions on Their Basis
| Authors | V.M. Katerynchuk, Z.R. Kudrynskyi, Z.D. Kovalyuk |
| Affiliations | Frantsevich Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Chernivtsi Department, str. Iryna Vilde, 5, Chernivtsi 58001, Ukraine |
| Е-mail | kudrynskyi@gmail.com |
| Issue | Volume 4, Year 2012, Number 2 |
| Dates | Received 08 March 2012; revised manuscript received 24 May 2012; published 04 June 2012 |
| Citation | V.M. Katerynchuk, Z.R. Kudrynskyi, Z.D. Kovalyuk 4 No 2, 02042 (2012) |
| DOI | |
| PACS Number(s) | 3.40.Lq, 81.16.Dn |
| Keywords | Atomic force microscopy (9) , Layered crystals, Heterojunctions, Spectral characteristics, Current-voltage characteristics (3) . |
| Annotation | The surfaces of the grown p-InSe and n-SnS2-xSex layered crystals were studied by means of atomic force microscopy. By the method of optical contact we have created p-InSe–n-SnS2-xSex heterojunctions and investigated their spectral and current-voltage characteristics. |
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List of References |
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