Polymeric Materials Modified by Semiconductor Substances in Friction Units of Braking Devices
| Authors | M.V. Kindrachuk1 , O.I. Volchenko2, D.O. Volchenko2 , N.O. Volchenko3, P.A. Polyakov3, A.O. Kornienko1, A.O. Yurchuk1 |
| Affiliations |
1National Aviation University, 1, Kosmonavt Komarov Prosp., 03058 Kyiv, Ukraine 2Ivano-Frankivsk National Technical University of Oil and Gas, 15, Karpatska St., 76019 Ivano-Frankivsk, Ukraine 3Kuban State Technological University, 2, Moskovska St., 35087 Krasnodar, Russia |
| Е-mail | vol21@ukr.net |
| Issue | Volume 11, Year 2019, Number 3 |
| Dates | Received 24 February 2019; revised manuscript received 12 June 2019; published online 25 June 2019 |
| Citation | M.V. Kindrachuk, O.I. Volchenko, D.O. Volchenko, и др., J. Nano- Electron. Phys. 11 No 3, 03014 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(3).03014 |
| PACS Number(s) | 81.40.Pq, 81.05.Hd |
| Keywords | Polymers (5) , Semiconductor materials, Energy levels, Microasperities of friction pairs, Transistor effect. |
| Annotation |
The materials of the article disclose contact-impulse frictional interaction of microasperities of friction pairs of band-shoe brake, based on the principles of the gradient theory of electric and thermal fields. It is proved that the electric field acts across, and the thermal field – longitudinally with frictional interaction of microasperities of friction pairs. At one of the main semiconductor substances Si (silicon), the characteristics and parameters of the metal – polymer – semiconductor structure in instantaneous electric fields observed at the initial moment of the frictional interaction are illustrated. Semiconductor elements are mounted on the side of the working surface of the friction linings and, when braking, interact with the chemical elements of the brake pulley rim, which contributes to the emergence of complex combinations of electrical conductivity junctions. They are capable of operating in the modes of microthermogenerators and microthermal coolers, diodes and transistors with their instantaneous switching. This leads to the emergence of direct and reverse electrical currents, loading and unloading the pulley rim. The effect of “transistor” is applied by selecting friction pairs of the brake to reduce their energy load, and as a result, increase wear resistance. Experimental studies of the improved friction pairs of the band-shoe brake show stabilization of the friction force and dynamic coefficient of friction, reduction of the surface and volume temperature gradients of the pulley rim and reduction of the braking moment to 3.0 %. This allows preventing overheating of the surface layers of the polymer linings and significantly increasing the effectiveness of the brake friction pairs. Due to the effect of the transistor, a reduction in the energy load of the friction pairs of the brake to 15.0 % and the wear of the working surfaces of the linings to 11.5 % have been achieved. |
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