The Crystalline Structure, Optical and Conductivity Properties of Fluorine Doped ZnO Nanoparticles
| Authors | A. Diha1, S. Benramache2 , L. Fellah3 |
| Affiliations |
1Department of Mechanical Engineering, University Larbi Tébessi, Tébessa 12000, Algeria 2Faculty of Hydrocarbons and Renewable Energies and Earth and Universe Sciences, University of Kasdi Merbah, 30000 Ouargla, Algeria 3Faculty of Hydrocarbons and Renewable Energies and Earth and Universe Sciences, University of Kasdi Merbah, 30000 Ouargla, Algeria |
| Е-mail | diha_a@oeph.sumdu.edu.ua |
| Issue | Volume 11, Year 2019, Number 3 |
| Dates | Received 16 January 2019; revised manuscript received 15 June 2019; published online 25 June 2019 |
| Citation | A. Diha, S. Benramache, L. Fellah, J. Nano- Electron. Phys. 11 No 3, 03002 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(3).03002 |
| PACS Number(s) | 61.46. + w |
| Keywords | Spray pyrolysis (9) , ZnO thin films, F-doped ZnO, Four-point techniques, Band gap (29) , Conductivity (43) . |
| Annotation |
This paper reports the effect of fluorine doping on ZnO thin films. Undoped and doped films were deposited by spray pyrolysis method on heated glass substrates at 380 °C with different concentrations of fluorine (0-15 at. %). X-ray diffraction patterns show the polycrystalline nature of the films with the preferred orientation along the c-axis. No other fluorine metal cluster and impurity phases have been observed with F doping. The crystalline size of the deposited thin films was calculated using Debye- Scherrer formula and found in the range between 13.7 and 37.3 nm. The optical transmittance of F doped ZnO thin films reduces up to 79 % as compared to undoped ZnO thin film in the visible region. The band gap was found to be decreasing in the range of 3.38-3.26 eV with F doping whereas it increases for higher doping of F concentration from 7-15 at. %. The Urbach energy (disorder) decreases from 120 to 90 meV that allows the atoms find a good site that is to say a better organization of the ZnO film, i.e. layers become homogeneous and well crystallized. The four-point techniques for measuring electrical conductivity show that all samples are n-type, and the best value of the electrical conductivity 9.24 10 – 5 ((·cm) – 1 was obtained for 5 at. % F. The increase of the electrical conductivity can be explained by the increase in carrier concentration of the films. FZO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity. |
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List of References |
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