Control of Switching Characteristics of Silicon-based Semiconductor Diode Using High Energy Linear Accelerator

Authors N. Harihara Krishnan1, Vikram Kumar Yadav1, N. Anandarao1, K.N. Jayaraman1, S. Govindaraj1, Ganesh Sanjeev2 , K.C. Mittal3

1 Semiconductors and Photovoltaics Dept, Bharat Heavy Electricals Limited, 560026 Bangalore, India

2 Microtron Center, Department of Studies in Physics, Mangalore University, Mangalore, India

3 Electron Beam Center, Bhabha Atomic Research Centre, Khargar, Navi Mumbai, India

Issue Volume 5, Year 2013, Number 2
Dates Received 15 February 2013; published online 04 May 2013
Citation N. Harihara Krishnan, Vikram Kumar Yadav, N. Anandarao, et al., J. Nano- Electron. Phys. 5 No 2, 02004 (2013)
PACS Number(s) 85.30. – Z, 61.82.Fk
Keywords Semiconductor diode, Reverse recovery characteristics (2) , Electron irradiation (2) , Linear accelerator.
Annotation This paper reports control of switching characteristics of silicon-based semiconductor diode using electron beam produced using linear accelerator. Conventionally, p-n junction chips of diode are exposed to gamma rays from a radioactive source or electron beam from a microtron, depending upon the required level of correction. High energy linear accelerators featuring simultaneous exposure of multiple chips are recent advancements in radiation technology. The paper presents the results of the radiation process using a 10 MeV linear accelerator as applied in industrial manufacturing of a high voltage diode (2600 V). The achieved values of reverse recovery time were found to be within the design limits. The suitability of the new process was verified by constructing the trade-off curve between the switching and conduction parameters of the diode for the complete range using large number of experimental samples. The paper summarizes the advantages of the new process over the conventional methods specifically with reference to industrial requirements. The developed process has been successfully implemented in semiconductor manufacturing.

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