Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach

Authors Ashutosh Kumar1, Michael Latzel2, C. Tessarek2, S. Christiansen2, R. Singh1

1 Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, 110016 New Delhi, India

2 Max Planck Institute for the Science of Light, 24, Günther-Scharowsky-Str. 1/Bau, 91058 Erlangen, Germany

Issue Volume 5, Year 2013, Number 2
Dates Received 15 February 2013; published online 04 May 2013
Citation Ashutosh Kumar, Michael Latzel, C. Tessarek, et al., J. Nano- Electron. Phys. 5 No 2, 02001 (2013)
PACS Number(s) 81.16. – c, 81.16.rf, 78.67. – n, 78.60.Hk
Keywords GaN (34) , Nanorod (4) , Nanomasking, Reactive-ion etching, Cathodoluminescence, Band-edge luminescence, Yellow band luminescence.
Annotation Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL) spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence.

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