Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium

Authors U. Dadwal, Praveen Kumar , R. Singh

Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, 110016 New Delhi, India

Е-mail udaydadwal@gmail.com
Issue Volume 5, Year 2013, Number 2
Dates Received 15 February 2013; revised manuscript received 29 April 2013; published online 04 May 2013
Citation U. Dadwal, Praveen Kumar, R. Singh, J. Nano- Electron. Phys. 5 No 2, 02002 (2013)
PACS Number(s) 61.80.Jh, 61.72.Cc
Keywords Implantation (7) , Ge (215) , Exfoliation (3) , Annealing (16) .
Annotation This work describes the influence of implantation temperature on the layer exfoliation of the H-implanted Ge substrate. For the implantation at RT, post-implantation annealing showed large exfoliated regions over the sample surface. Two depths of the exfoliated regions were observed with average values of about 654 and 856 nm from the top of the H-implanted surface. In the H-implanted Ge at 300 °C, exfoliation occurred in the as-implanted state in the form of surface craters. The average depth of these craters was measured to be about 890 nm from the surface. Simulation results showed that the depth of the exfoliated regions was either located near to the damage peak or away from the H-peak depending upon the implantation temperature.

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