Computational Study of the Photovoltaic Performance of CdS/Si Solar Cells: Anti-reflective Layers Effect
| Authors | O. Boultif1, B. Zaidi1 , S. Roguai2, A. Mehdaoui1, F. Diab1, T. Bouarroudj3, K. Kamli4, Z. Hadef4, C. Shekhar5 |
| Affiliations |
1Department of Physics, Faculty of Material Sciences, University of Batna 1, Batna, Algeria 2LaSP2A Laboratory of Structures Properties and Interatomic Interactions, Science of Matter Department, Abbes Laghrour University, Khenchela 40000, Algeria 3Scientific and Technical Research Center in Physico-Chemical Analyses (CRAPC), Bouismail, Tipaza, Algeria 4Department of Physics, Faculty of Sciences, University 20 Août 1955, BP 26, 21000 Skikda, Algeria 5Department of Applied Physics, Amity University Gurgaon, 122413 Haryana, India |
| Е-mail | beddiaf.zaidi@univ-batna.dz |
| Issue | Volume 15, Year 2023, Number 2 |
| Dates | Received 23 October 2022; revised manuscript received 18 April 2023; published online 27 April 2023 |
| Citation | O. Boultif, B. Zaidi, S. Roguai, et al., J. Nano- Electron. Phys. 15 No 2, 02016 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(2).02016 |
| PACS Number(s) | 84.60.Jt, 88.40.jm |
| Keywords | Si (554) , CdS (33) , ITO (13) , ZnO (88) , Solar cells (17) , SCAPS-1D (21) . |
| Annotation |
Photovoltaic conversion is a photo-electronic process that involves the interaction between a photo and an electron. The subject is to present a study on the physical principle of operation of a photovoltaic cell based on silicon. The external parameters that we have determined from a photovoltaic model are the short-circuit current (Jsc), the open-circuit voltage (Voc) and the photovoltaic conversion efficiency (η), we simulate the photovoltaic parameters by the Solar Cell Capacitance Simulator structures (SCAPS-1D) software whose mathematical model is based on solving the equations of Poisson and continuity of electrons and holes. We used two structures to carry out this study, the first ITO/CdS/Si and the second ZnO/Si/CdS, after having noted their current-voltage characteristic (J-V). In this paper we studied the effect of the temperature and the doping concentration on the two structures of heterojunction solar cell. The highest performance value for the ZnO/CdS/Si heterojunction solar cell was simulated as 29.3 %. The performance value for the ITO/CdS/Si structure was increased to 29.7 % with the impact of the ITO antireflective layer. |
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List of References |
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