Performance Analysis of Incorporating a Buried Metal Layer in a Junction-Less Multi-Channel Field Effect Transistor

Authors S. Ashok Kumar , A. Roshan Solomon, T. Thirumurugan, S. Dhanraj

Department of ECE, Sri Manakula Vinayagar Engineering College, Puducherry, India

Issue Volume 15, Year 2023, Number 2
Dates Received 10 December 2022; revised manuscript received 20 April 2023; published online 27 April 2023
Citation S. Ashok Kumar, A. Roshan Solomon, T. Thirumurugan, S. Dhanraj, J. Nano- Electron. Phys. 15 No 2, 02007 (2023)
PACS Number(s) 85.30.Tv
Keywords Junction less transistor, Multi channel, Buried metal layer, Sentaurus TCAD.

This work focuses on the outcomes brought about by the incorporation of Buried Metal Layer (BML) in a Junction-less Multi-Channel Field Effect Transistor (JL MCFET). Two stacked channels separated by an inter-oxide layer, one having a Trigate structure and other having a Double gate structure, have been implemented with a BML and it has been formed as Junction-less Buried Metal Layer Multi-Channel Field Effect Transistor (JL BML-MCFET). A Schottky junction is created at the bottom of the device layer by adding a buried metal layer with sufficient work function. The performance of device parameters like the electric potential and IV characteristics have been described. Sentaurus Technology Computer Aided Design (TCAD) was used to evaluate this device. To calculate tunneling and recombination, the TCAD simulates the Lombardi mobility model, Shockley-Read-Hall (SRH), and Auger recombination models. This device generates four times more output current by employing buried metal layer. The parasitic leakage has been reduced and the ION/IOFF ratio has been stabilized. Even though the gate voltage has been raised to greater levels, the subthreshold swing (SS) value has been kept at an Ideal value of about 60 mV/dec. Also, the scalability is enhanced, and the Schottky junction's high vertical field lowers the lateral coupling between the source and drain field lines.

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