Features of Photoelectric Processes in CdS/CdTe Thin Film Heterosystems with Nanoscale Layers in Back Contacts
| Authors | A.L. Khrypunova , T.M. Shelest, A.I. Dobrozhan , A.V. Meriuts |
| Affiliations |
National Technical University «Kharkіv Polytechnic Institute», 2, Kyrpychov St., 61002 Kharkiv, Ukraine |
| Е-mail | dobr.abs@gmail.com |
| Issue | Volume 13, Year 2021, Number 6 |
| Dates | Received 27 August 2021; revised manuscript received 04 December 2021; published online 20 December 2021 |
| Citation | A.L. Khrypunova, T.M. Shelest, A.I. Dobrozhan, A.V. Meriuts, J. Nano- Electron. Phys. 13 No 6, 06015 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(6).06015 |
| PACS Number(s) | 72.80.Ey, 84.60.Jt |
| Keywords | Cadmium sulphide, Cadmium telluride (2) , Output parameters, Solar cell (51) , Light diode characteristics. |
| Annotation |
A comparative study of the influence of the solar radiation intensity level on the output parameters and light diode characteristics of solar cells (SCs) based on the CdS/CdTe heterosystem with different types of back contact has been carried out. It is shown that the studied SCs obtained by vacuum thermal evaporation method have the maximum efficiency under illumination conditions of 60 % AM1.5. The presence of a maximum is caused by a decrease in the fill factor of the light I-V characteristic due to a decrease in the shunt resistance, while the short-circuit current and open-circuit voltage increase with increasing illumination. In the case of solving the problem with a decrease in the shunt resistance, it can be expected that the tendency to an increase in the efficiency with increasing illumination level can be continued in the region of concentrated radiation. It is shown that not only the back contact material, but also the nature of the interphase interaction of the back contact with the base CdTe layer has a determinative influence on the illumination dependence of the series resistance of these SCs obtained by vaсuum thermal evaporation method. The observed nonmonotonic dependence of the diode saturation current density on the illumination level is associated with two competing physical mechanisms. One mechanism assumes the traditional increase in the diode saturation current due to an increase in the concentration of nonequilibrium charge carriers generated by light, and the other one determines a decrease in the diode saturation current due to the filling of traps, which leads to an increase in the charge carrier lifetime. |
|
List of References |
Other articles from this number
1) Deep Impact of the n-c-Si Defect Density on Heterojunction with Intrinsic Thin Layer Solar Cells [06001-1-06001-4]2) Comparative Study of the Influence of c-Si:H, a-Si:H, pm-Si:H and c-SiOx as a Passivation Layer on the Performance of HIT n-c-Si Solar Cells [06002-1-06002-4]
3) Enhanced Humidity Sensing Properties of Surfactant-Free Hydrothermally Synthesized Tin Oxide Nanoparticles [06003-1-06003-5]
4) Modeling and Simulation of MOSFET (High-k Dielectric) Using Genetic Algorithms [06004-1-06004-5]
5) Design and Analysis of a High-Performance Capsule-Shaped 2D-Photonic Crystal Biosensor: Application in Biomedicine [06005-1-06005-6]
6) Comparative Study of Thermal and Optical Properties of PANI Based Binary Nanocomposites [06006-1-06006-4]
7) Comparative Analysis of the Electrical Properties of Nanocrystalline NiMoO4 Hydrate and α-NiMoO4 Obtained by Hydrothermal Method [06007-1-06007-6]
8) Hydrogen Treatment of SPR Film Sensors: Experiments and Theoretical Modeling [06008-1-06008-5]
9) The Ag Influence on the Surface States of TiO2, Optical Activity and Its Cytotoxicity [06009-1-06009-5]
10) Distribution of Excess Charge Carriers in Bilateral Macroporous Silicon with Different Thicknesses of Porous Layers [06010-1-06010-5]
11) Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio [06011-1-06011-4]
12) On the Time Resolved Optogalvanic Spectroscopy of Neon in a Hollow Cathode Discharge [06012-1-06012-6]
13) Effect of the Content of Molybdenum Disilicide on the Microstructure and Phase Transformations of ZrB2-MoSi2-10Al Coatings upon Annealing in Air [06013-1-06013-4]
14) Optical Properties of ZnO Thin Film: A Simulation Study for Optoelectronic Applications [06014-1-06014-4]
15) A Comparative Study on the Optoelectronic Performance of Undoped, Mg-doped and F/Mg Co-doped ZnO Nanocrystalline Thin Films [06016-1-06016-6]
16) Comparative Study and Characterization of Reduced Graphene Oxide (RGO) and Porous Reduced Graphene Oxide (P-RGO) Based on Coconut Shell Waste [06017-1-06017-6]
17) Effect of Reinforcing Particle Shape on the Behavior of Composites Materials [06018-1-06018-4]
18) Superparamagnetism in Si1 – xGex (B, Hf) Whiskers [06019-1-06019-5]
19) Topological Analysis of the Effect of Annealing on the Grain-Boundary Structure of Polysilicon Films [06020-1-06020-4]
20) Electrochemical Properties of Hybrid Supercapacitors Formed Based on Nanoporous Carbon and Nickel Tungstate [06021-1-06021-5]
21) Experimental Data on Dynamic Changes of Radio Pulses When They are Emitted by Piezoceramic Electromechanical Transducers [06022-1-06022-5]
22) Iron-Doped Titania: Synthesis, Structural, Magnetic and Photocatalytic Properties [06023-1-06023-7]
23) Properties of Amorphous Silica Synthesized from Copper-Smelting Slags [06024-1-06024-6]
24) Strengthening Mechanisms in the Surface Layer of Duralumin Modified by a High Current Pulsed Relativistic Electron Beam [06025-1-06025-6]
25) Analysis of Mechanisms to Increase the Industrial Silicon Solar Cell Efficiency [06026-1-06026-8]
26) Numerical Analysis of the Nanoparticle Dynamics in a Viscous Liquid: Deterministic Approach [06027-1-06027-5]
27) Energy and Frequency Properties of Planar n+-n-n+ Diodes with Active Side Boundary [06028-1-06028-4]
28) Methods for Calculating the Transfer Functions of Broadband Plate Piezoelectric Transducers with Transition Layers [06029-1-06029-6]
29) Evaluation of Device Fabrication from FET to CFET: A Review [06030-1-06030-8]
30) Analysis of Crosstalk Noise Using Graphene Nanoribbon Interconnects by Changing Wire Spacing and Electron Mean Free Path [06031-1-06031-4]
31) Investigation of the Structural, Electrical and Corrosion Properties of NbN Films Deposited by Magnetron Sputtering (DC Power Supply) Technique at Different Power [06032-1-06032-6]
32) Optical Properties of CuSCN/Stilbazolium Dye Hybrid Thin Films [06033-1-06033-4]
33) Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime [06034-1-06034-4]
34) Study and Design of Printed Rectangular Microstrip Antenna Arrays at an Operating Frequency of 27.5 GHz for 5G Applications [06035-1-06035-5]
35) Influence of the Angle of Incident Light on the Performance of Textured Silicon Solar Cells [06036-1-06036-5]
