States Density Distribution for Determination of a-Si:H Photoconductivity

Authors O.Yu. Babychenko, A.G. Pashchenko

Kharkov National University of Radio Electronics 14 Nayka Ave. 61166 Kharkov, Ukraine

Е-mail [email protected]
Issue Volume 9, Year 2017, Number 5
Dates Received 30 June 2017; revised manuscript received 09 July 2017; published online 16 October 2017
Citation O.Yu. Babychenko, A.G. Pashchenko, J. Nano- Electron. Phys. 9 No 5, 05044 (2017)
DOI 10.21272/jnep.9(5).05044
PACS Number(s) 73.50.Pz, 78.66.Jg
Keywords Solar element, Amorphous silicon (7) , Photo absorption, Energy zones.
Annotation The paper presents an empirical model of the spectral dependence of the distribution of densities of electron states, which covers the main features of hydrogenated amorphous silicon. The effect of the degree of disorder the amorphous structure on the shape and size of tails in electronic states valence band and conduction band. These tails in the forbidden area affect many of the unique properties of amorphous semiconductors. The results can be applied for optimization of technology and modeling of many devices based on amorphous silicon (solar cells, transistors, etc.).

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