Spectroscopic Ellipsometry Studies and Temperature Behaviour of the Dielectric Function of TlInS2 Layered Crystal

Authors O.O. Gomonnai1, O. Gordan2, P.P. Guranich1, P. Huranich1, A.G. Slivka1, A.V. Gomonnai1,3, D.R.T. Zahn2 ,

1 Uzhhorod National University, 46, Pidhirna Str., 88000 Uzhhorod, Ukraine

2 Semiconductor Physics, Technische Universität Chemnitz, 70, Reichenhainer Str., D-09107 Chemnitz, Germany

3 Institute of Electron Physics, Ukr. Nat. Acad. Sci., 21, Universytetska Str., 88017 Uzhhorod, Ukraine

Е-mail gomonnai.o@gmail.com
Issue Volume 9, Year 2017, Number 5
Dates Received 30 June 2017; revised manuscript received 11 August 2017; published online 16 October 2017
Citation O.O. Gomonnai, O. Gordan, P.P. Guranich, et al., J. Nano- Electron. Phys. 9 No 5, 05025 (2017)
DOI 10.21272/jnep.9(5).05025
PACS Number(s) 78.67. – n, 78.90. + t
Keywords Dielectric function, Optical transitions, Structural phase transitions.
Annotation Real and imaginary parts of the dielectric function of TlInS2 single crystals in the spectral range from 1 to 5 eV were determined within a temperature range of 133–293 K from spectroscopic ellipsometry measurements. The energies of interband transitions (critical points) for TlInS2 were obtained from the second derivatives of the dielectric function. Temperature dependent features observed in the temperature range of the structural phase transition (190–220 K) and at lower temperatures are discussed.

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