Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm

Authors V.P. Veleschuk1, A.I. Vlasenko1, Z.K. Vlasenko1, D.N. Khmil’1, O.M. Kamuz1, I.V. Petrenko2, V.P. Tartachnyk2, A.V. Shulga3, V.V. Borshch3
Affiliations

1 V.E. Lashkaryov Institute of Semiconductor Physics of NASU, 41, Nauki Ave., 03680 Kyiv, Ukraine

2 Institute for Nuclear Research of NASU, 47, Nauki Ave., 03680 Kyiv, Ukraine

3 Poltava National Technical Yuri Kondratyuk University, 24, Pershotravnevyi Ave., 36011 Poltava, Ukraine

Е-mail [email protected]
Issue Volume 9, Year 2017, Number 5
Dates Received 23 July 2017; published online 16 October 2017
Citation V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, et al., J. Nano- Electron. Phys. 9 No 5, 05031 (2017)
DOI 10.21272/jnep.9(5).05031
PACS Number(s) 85.60.Jb, 70.60.Fi, 81.70.Fy, 61.72.Ji
Keywords UV LED 365 nm, InGaN/GaN, Electroluminescence.
Annotation Visible electro- and photoluminescence of the ultraviolet LEDs (  365 nm) was studied. It is established that at nitrogen temperature yellow electroluminescence is absent and occurs when the current or temperature increases. The light output power and luminous efficiency of the yellow electroluminescence in the 450-740 nm range were measured. At temperature decreasing an increase of the luminescence intensity in the spectrum range 393-460…490 nm is observed.

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