Structural Models and Charge Transfer Processes of Granulated Nano Semiconductors

It is known that the physical properties of granulated semiconductors that appear under certain conditions depend on their size or access state or defects on their surface, and their formation depends on the methods of obtaining granulated semiconductors. Structural models of granular semiconductors and charge transfer processes in them are explained in this work. Research shows that in practice, granulated semiconductor particles can be arranged in a row or next to each other. In the first case, the process of charge transfer from the first particle to the second particle is carried out through the inter-particle boundaries formed between them. In this case, Jth current will appear. As the temperature increases, localized traps with Ein energy level appear successively in the interparticle boundary regions. An increase in the amount of charges (Qi) captured in localized traps leads to an increase in the height of the potential barrier (φ), which, in turn, leads to a decrease in electrical conductivity. In the second case, the particles are located next to each other, and the charge transfer processes occur simultaneously, as in the first case, along the adjacent interparticle boundary areas. In this case, the conductivity of the traps increases, since the charge transfer process mainly occurs along the interparticle border areas located next to each other.