Authors | B. Lakehal1 , A. Dendouga2 |
Affiliations |
1Department of Electronics, University of Kasdi Merbah Ouargla, Ouargla 30000 Algeria 2Laboratory of Advanced Electronic University of Batna2, 05000 Algeria |
Е-mail | lakehalbra@gmail.com |
Issue | Volume 10, Year 2018, Number 6 |
Dates | Received 18 June 2018; revised manuscript received 01 December 2018; published online 18 December 2018 |
Citation | B. Lakehal, A. Dendouga, J. Nano- Electron. Phys. 10 No 6, 06046 (2018) |
DOI | https://doi.org/10.21272/jnep.10(6).06046 |
PACS Number(s) | 85.55.De, 84.60.Jt |
Keywords | Schottky-barrier height, Genetic algorithm (5) , Ideality factor (10) , Fill factor (2) . |
Annotation |
This paper proposes a new method based on a genetic algorithm (GA) approach to optimize the electrical parameters such as height barrier, ideality factor, fill factor, open-circuit voltage and power conversion efficiency, in order to improve the electrical performance of Schottky solar cells in an over wide range of temperature. Thus the parameters research process called objective function is used to find the optimal electrical parameters providing greater conversion efficiency. The proposed model results are also compared to experimental and analytical I-V data, where a good agreement has been found between them. Therefore, this approach may provide a theoretical basis and physical insights for Schottky solar cells. |
List of References |