Effect of Annealing Temperature on Structural, Optical and Electrical Properties of ZnO Thin Films Prepared by Sol-Gel Method
| Authors | S. Benramache1, Y. Aoun1,2, S. Lakel3, H. Mourghade3, R. Gacem3, B. Benhaoua4 |
| Affiliations |
1Laboratoire de Physique Photonique et Nanomatériaux Multifonctionnels, University of Biskra, 07000 Algeria 2Mechanics Department, University of El-Oued, El-Oued, 39000 Algeria 3Material Sciences Department, Faculty of Science, University of Biskra, 07000 Algeria 4Unite de Développement des Energies Renouvelables dans les Zones Arides, El-Oued, Algérie |
| Е-mail | saidbenramache07@gmail.com |
| Issue | Volume 10, Year 2018, Number 6 |
| Dates | Received 22 September 2018; revised manuscript received 07 December 2018; published online 18 December 2018 |
| Citation | S. Benramache, Y. Aoun, S. Lakel, et al., J. Nano- Electron. Phys. 10 No 6, 06032 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(6).06032 |
| PACS Number(s) | 77.84.Bw, 78.20. – e, 81.20.Fw |
| Keywords | ZnO (92) , Thin films (60) , Transparent conducting films, Annealing temperature (5) , Spin-coating method. |
| Annotation |
A transparent semiconductor ZnO thin film was prepared on glass substrates using spin coating sol-gel method. The coated ZnO films were annealed in air for 2 hours at different temperatures of 0, 450, 500, 550 and 600 °C. The films were obtained at a concentration of sol-gel solution is 0.5 M. In present paper, the structural, optical and electrical properties of the ZnO thin films were studied as a function of the annealing temperature. The DRX analyses indicated that the coated ZnO films exhibit an hexagonal structure wurtzite and (002) oriented with the maximum value of crystallite size G ( 69.32 nm is measured of ZnO film annealed at 600 °C. The crystallinity of the thin films improved at high annealing temperature which was depends too few defects. Spectrophotometer (UV-vis) of a ZnO films deposited at different annealing temperatures shows an average transmittance of about 88 %. The band gap energy decreased after annealing temperature from Eg ( 3.359 to 3.117 eV for without annealing and annealed films at 450 °C, respectively, than increased at 600 °C to reaching the maximum value 3.251 eV. The minimum value of the sheet resistance Rsh of the films is 107635 Ω was obtained for ZnO thin film annealed at 600 °C. The best estimated structure, optical and electrical results are achieved in annealed ZnO film at 600 °C. |
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