Formation InAs Quantum Dots in a Matrix GaAs in Kinetic Mode for CVD-method
| Authors | S.K. Guba |
| Affiliations | Lviv Polytechnic National University, 12, S. Bandery St., 79013 Lviv, Ukraine |
| Е-mail | gubask@polynet.lviv.ua |
| Issue | Volume 9, Year 2017, Number 3 |
| Dates | Received 14 February 2017; revised manuscript received 27 February 2017; published online 30 June 2017 |
| Citation | S.K. Guba, J. Nano- Electron. Phys. 9 No 3, 03026 (2017) |
| DOI | 10.21272/jnep.9(3).03026 |
| PACS Number(s) | 68.65. Hb, 81.10.Aj |
| Keywords | Quantum dot (12) , Self-organization (5) , Kinetic regime, CVD-metod. |
| Annotation | We present the results of theoretical study for the kinetic mode of quantum dot formation in the InAs / GaAs system. The theory is valid at the kinetic stage of quantum dot formation, when the island ensemble remains dilute and thus noninteracting. The estimating characteristics of the kinetics formation of InAs quantum dot in the matrix GaAs, and their structural properties at CVD-method. The calculated results can be used to analyze technology heteronanostructures In1 – xGaxAs/InAs/GaAs for CVD-method. Moreover they are useful for modeling the structural properties of InAs quantum dot in the system InAs/GaAs. |
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List of References English version of article |
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