Influence of Surface Processing Si on the Electrical Properties of Heterostructures p-NiO/n-Si
| Authors | H.P. Parkhomenko , M.M. Solovan , P.D. Maryanchuk |
| Affiliations | Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynskogo Str., 58012 Chernivtsi, Ukraine |
| Е-mail | |
| Issue | Volume 9, Year 2017, Number 3 |
| Dates | Received 20 February 2017; published online 30 June 2017 |
| Citation | H.P. Parkhomenko, M.M. Solovan, P.D. Maryanchuk, J. Nano- Electron. Phys. 9 No 3, 03024 (2017) |
| DOI | 10.21272/jnep.9(3).03024 |
| PACS Number(s) | 73.40. – c |
| Keywords | Heterostructure (7) , Thin film (101) , Charge transport mechanisms, NiO (20) , Si (561) . |
| Annotation | Heterostructure p-NiO/n-Si was fabrication by reactive magnetron sputtering thin films nickel oxide on substrates with crystal n-Si.The influence of treatment Si substrate on electrical properties of heterostructures was shown. Studied their dark current-voltage characteristics at room temperature. It was established that the main transfer mechanisms in the forward bias is a multi-step tunneling current transfer mechanism involving surface states at the interface between the p-NiO / n-Si and tunneling, under reverse bias - tunneling and emission of Frenkel-Poole. |
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List of References English version of article |
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