Title |
Effect of Gate Length Scaling on Various Performance Parameters in DG-FinFETs: a Simulation Study |
Authors |
Rakesh Vaid, Meenakshi Chandel |
Issue |
Volume 4, Year 2012, Number 3 |
Pages |
03007-1 - 03007-6 |
Title |
Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials |
Authors |
Tawseef A. Bhat, M. Mustafa, M.R. Beigh |
Issue |
Volume 7, Year 2015, Number 3 |
Pages |
03010-1 - 03010-5 |
Title |
Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor |
Authors |
Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza |
Issue |
Volume 8, Year 2016, Number 4 |
Pages |
04037-1 - 04037-4 |
Title |
Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder |
Authors |
S. Rashid, S. Khan, A. Singh, |
Issue |
Volume 9, Year 2017, Number 5 |
Pages |
05003-1 - 05003-4 |
Title |
Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions |
Authors |
Ahmed Mahmood, Waheb A. Jabbar, Yasir Hashim, Hadi Bin Manap |
Issue |
Volume 11, Year 2019, Number 1 |
Pages |
01011-1 - 01011-5 |
Title |
Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET |
Authors |
A. Pattnaik, Sruti S. Singh, S.K. Mohapatra |
Issue |
Volume 11, Year 2019, Number 6 |
Pages |
06028-1 - 06028-7 |
Title |
Numerical Simulation of FinFET Transistors Parameters |
Authors |
І.P. Buryk, A.O. Golovnia, M.M. Ivashchenko, L.V. Odnodvorets |
Issue |
Volume 12, Year 2020, Number 3 |
Pages |
03005-1 - 03005-4 |
Title |
Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs |
Authors |
Zohmingmawia Renthlei, Swagat Nanda, Rudra Sankar Dhar |
Issue |
Volume 13, Year 2021, Number 5 |
Pages |
05013-1 - 05013-6 |
Title |
Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio |
Authors |
Yasir Hashim, Safwan Mawlood Hussein |
Issue |
Volume 13, Year 2021, Number 6 |
Pages |
06011-1 - 06011-4 |
Title |
Evaluation of Device Fabrication from FET to CFET: A Review |
Authors |
J. Lakshmi Prasanna, M. Ravi Kumar, Ch. Priyanka, Chella Santhosh |
Issue |
Volume 13, Year 2021, Number 6 |
Pages |
06030-1 - 06030-8 |
Title |
Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET |
Authors |
Payal Kumari, Swagat Nanda, Priyanka Saha, Rudra Sankar Dhar |
Issue |
Volume 14, Year 2022, Number 2 |
Pages |
02004-1 - 02004-4 |
Title |
Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio |
Authors |
Yasir Hashim, Safwan Mawlood Hussein |
Issue |
Volume 14, Year 2022, Number 5 |
Pages |
05003-1 - 05003-6 |
Title |
Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications |
Authors |
P. Parthasarathi, T.S. Arun Samuel, P. Vimala, N. Arumugam |
Issue |
Volume 14, Year 2022, Number 5 |
Pages |
05008-1 - 05008-6 |
Title |
High Temperature Effects on the Static Performance of 14 nm TG SOI N FinFET |
Authors |
A. Lazzaz, K. Bousbahi, M. Ghamnia |
Issue |
Volume 15, Year 2023, Number 2 |
Pages |
02005-1 - 02005-5 |
Title |
Performance Enhancement of the Urdhva-Tiryagbhyam based Vedic Multiplier using FinFET |
Authors |
P. Vimala, Soumya G. Hosmani |
Issue |
Volume 16, Year 2024, Number 2 |
Pages |
02002-1 - 02002-5 |