Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts
| Автори | B.P. Modi1, J.M. Dhimmar1, K.D. Patel2 |
| Афіліація | 1 Department of Physics, Veer Narmad South Gujarat University, Surat-395 007,Gujarat, India 2 Departments of Physics, Sardar Patel University. Vallabhvidyanagar-388 120, Gujarat, India |
| Е-mail | bharatpmodi.bharuch@gmail.com |
| Випуск | Том 5, Рік 2013, Номер 2 |
| Дати | Одержано 15.02.2013, у відредагованій формі - 03.05.2013, опубліковано online - 04.05.2013 |
| Цитування | B.P. Modi, J.M. Dhimmar, K.D. Patel, J. Nano- Electron. Phys. 5 No 2, 02005 (2013) |
| DOI | |
| PACS Number(s) | 73.30. + y, 73.20. – r |
| Ключові слова | Schottky barrier (8) , Phase transition (6) , Barrier height (11) , Ideality factor (10) . |
| Анотація | Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor – liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p) contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts. |
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