Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes
| Автори | Usha Parihar1, N. Padha1, C.J. Panchal2 |
| Приналежність | 1 Department of Physics& Electronics, University of Jammu, Jammu, 180006 J&K, India 2 M.S. University of Baroda, Faculty of Technology and Engineering, 390 009 Vadodara, India |
| Е-mail | pariusha@gmail.com |
| Випуск | Том 5, Рік 2013, Номер 2 |
| Дати | Одержано 15.02.2013; опубліковано online 04.05.2013 |
| Посилання | Usha Parihar, N. Padha, C.J. Panchal, J. Nano- Electron. Phys. 5 No 2, 02015 (2013) |
| DOI | |
| PACS Number(s) | 73.40.QV, 73.61.Ey, 85.30 Hi |
| Ключові слова | Polycrystalline (2) , schottky diodes (2) , Flash evaporation (3) , Current-voltage (I-V) (2) , Capacitance-voltage (C-V) characteristics, Image force, Dipole lowering effects, Interface states, M-S junction template. |
| Анотація | Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C – 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed. |
|
Перелік посилань |
Інші статті цього номера
1) Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [02001-1-02001-3]2) Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium [02002-1-02002-3]
3) Growth and Characterization of Nickel Catalyzed Gallium Oxide Nanowires on Sapphire Substrate [02003-1-02003-3]
4) Control of Switching Characteristics of Silicon-based Semiconductor Diode Using High Energy Linear Accelerator [02004-1-02004-4]
5) Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts [02005-1-02005-3]
6) Modeling of Si-QD Solar Cell in MATLAB [02006-1-02006-3]
7) Mechanochemically Synthesized CIGS Nanocrystalline Powder for Solar Cell Application [02007-1-02007-4]
8) Solar Cell Parameters Extraction from a Current-Voltage Characteristic Using Genetic Algorithm [02008-1-02008-3]
9) Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure [02009-1-02009-3]
10) Modeling and Design of AlN Based SAW Device and Effect of Reflected Bulk Acoustic Wave Generated in the Device [02010-1-02010-4]
11) An Improved SPICE Model for MEMS Based Capacitive Accelerometers [02011-1-02011-7]
12) Field Emission Behaviour of the Single Wall Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapour Deposition (PECVD) System [02012-1-02012-3]
13) Effect of Rapid Thermal Annealing of CIGS Thin Film as an Absorber Layer [02013-1-02013-7]
14) Impact of Scaling Gate Insulator Thickness on the Performance of Carbon Nanotube Field Effect Transistors (CNTFETs) [02014-1-02014-6]
15) Laser Induced Damage Studies on Al2O3, SiO2, and MgF2 Thin Films for Anti-Reflection Coating Application in High Power Laser Diode [02016-1-02016-4]
16) Kinetics of Amorphous-Crystalline Transformation of Some Se-Te-In Chalcogenide Glasses Using Gao and Wang Model [02017-1-02017-4]
17) Gamma Radiation Induced Effects in TeO2 Thin Films [02018-1-02018-3]
18) Dielectric Properties and AC Conductivity Measurements of Amorphous Ge15Se85 Glass [02019-1-02019-4]
19) A.C. Conductivity of Ag Incorporated Se-Te-Bi Glassy Alloy [02020-1-02020-5]
20) First Order Phase Transformation in Amorphous Ge25Se75 – xSbx Glasses [02021-1-02021-4]
21) Structural Microstructural and Electrical Transport Studies of Ba(Fe0.25Eu0.25Nb0.5)O3 [02022-1-02022-4]
22) All-Solid-Thin Film Electrochromic Devices Consisting of Layers ITO / NiO / ZrO2 / WO3 / ITO [02023-1-02023-3]
23) Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations [02024-1-02024-3]
24) Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films [02025-1-02025-3]
25) X-ray Peak Broadening Analysis and Optical Studies of ZnO Nanoparticles Derived bySurfactant Assisted Combustion Synthesis [02026-1-02026-6]
26) Study of Electrical, Optical and Structural Properties of Al- Doped ZnO Thin Films on PEN Substrates [02027-1-02027-4]
27) Effect on Structural, Micro Structural and Optical Properties due to Change in Composition of Zn and Sn in ZnO:SnO2 Nanocomposite Thin Films [02028-1-02028-4]
28) Preparation and Characterization of Antimony Doped Tin Oxide Thin Films Synthesized by Co-Evaporation of Sn and Sb using Plasma Assisted Thermal Evaporation [02029-1-02029-4]
29) Evidence of Itinerant Ferromagnetism in Transition Metal Doped ZnO Nanostructures [02030-1-02030-5]
30) Effects of Annealing on Structural Properties of Copper Zinc Tin Sulphide (CZTS) Material [02031-1-02031-3]
31) Synthesis of Reduced Graphene Oxide Using Novel Exfoliation Technique and its Characterizations [02032-1-02032-3]
