Modeling of Si-QD Solar Cell in MATLAB
| Автори | S.S. Bohra1, A.K. Panchal2 |
| Афіліація | 1 Electrical Engg. Dept. ,Sarvajanik College of Engg. and Tech., Athwalines, Surat, 390 001 Gujarat, India 2 Elect. Engg. Dept., SVNIT, Ichchhanath, Surat, 395 007 Gujarat, India |
| Е-mail | |
| Випуск | Том 5, Рік 2013, Номер 2 |
| Дати | Одержано 15.02.2013; опубліковано online 04.05.2013 |
| Цитування | S.S. Bohra, A.K. Panchal, J. Nano- Electron. Phys. 5 No 2, 02006 (2013) |
| DOI | |
| PACS Number(s) | 84.60.Jt, 81.16. – c |
| Ключові слова | Quantum Dot (12) , Si-QD, Barrier layer, Quantum Confinement Effect (QCE), Photo-current. |
| Анотація | In this paper, the modeling and analysis of single bi-layer Si-QD solar cell is addressed. The modeling of solar cell is done in MATLAB. The photo currents are calculated for various Si-QD diameters like 2.5, 3, 3.5 and 4 nm and SiO2 barrier layer thicknesses like 2.5, 2 and 1.5 nm. It has been observed that with the Si-QD diameter, the photo-current increases. On the other hand, photo-current varies conversely with barrier layer thickness due low carrier tunneling probability through barrier. |
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