Автори | C. Kavitha, M. Ganesh Madhan |
Афіліація | Department of Electronics Engineering, Anna University, M.I.T Campus, 600 044 Chennai, India |
Е-mail | kaviphd2011@yahoo.co.in, mganesh@annauniv.edu |
Випуск | Том 5, Рік 2013, Номер 2 |
Дати | Одержано 15.02.2013, у відредагованій формі - 29.04.2013, опубліковано online - 04.05.2013 |
Цитування | C. Kavitha, M. Ganesh Madhan, J. Nano- Electron. Phys. 5 No 2, 02011 (2013) |
DOI | |
PACS Number(s) | 85.85. + jх |
Ключові слова | Squeezed film, Capacitive accelerometer, Thermal effect, Damping, Electrical attractive force. |
Анотація | An improved electrical equivalent circuit for a capacitive MEMS accelerometer, incorporating temperature, pressure and squeezed film effects is reported. The circuit model corresponds to a single degree of freedom (SDOF) vibrating system, including dominant micro physical mechanisms. Static, transient and frequency response analysis are carried out at temperature and pressure ranges of 100 K to 400 K and 30 to 3000 Pa respectively. The effect of these parameters on the resonance frequency, peak displacement and settling time of the accelerometer are determined. Simulations are performed using PSpice® circuit simulator. |
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