Автори | Sanjaykumar J. Patel1, Ashish K. Panchal2, Vipul Kheraj1 |
Афіліація | 1 Department of Applied Physics, Sardar Vallabhbhai National Institute of Technology, Surat – 395007, India 2 Department of Electrical Engineering, Sardar Vallabhbhai National Institute of Technology, Surat – 395007, India |
Е-mail | vipulkheraj@gmail.com |
Випуск | Том 5, Рік 2013, Номер 2 |
Дати | Одержано 15.02.2013, у відредагованій формі - 01.05.2013, опубліковано online - 04.05.2013 |
Цитування | Sanjaykumar J. Patel, Ashish K. Panchal, Vipul Kheraj, J. Nano- Electron. Phys. 5 No 2, 02008 (2013) |
DOI | |
PACS Number(s) | 88.40 H, 87.55 kd |
Ключові слова | Solar cell (51) , Genetic algorithm (5) . |
Анотація | The determination of solar cell parameters is very important for the evaluation of the cell performance as well as to extract maximum possible output power from the cell. In this paper, we propose a computational based binary-coded genetic algorithm (GA) to extract the parameters (I0, Iph and n) for a single diode model of solar cell from its current-voltage (I-V) characteristic. The algorithm was implemented using LabVIEW as a programming tool and validated by applying it to the I-V curve synthesized from the literature using reported values. The values of parameters obtained by GA are in good agreement with those of the reported values for silicon and plastic solar cells. change to “After the validation of the program, it was used to extract parameters for an experimental I-V characteristic of 4 × 4 cm2 polycrystalline silicon solar cell measured under 900 W/m. The I-V characteristic obtained using GA shows excellent match with the experimental one. |
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