Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations
| Автори | Tanveer A. Dar, Arpana Agrawal , Pratima Sen |
| Приналежність | Laser Bhawan, School of Physics, Devi Ahilya University, Takshashila Campus, Indore-452001, India |
| Е-mail | tanveerphysics@gmail.com |
| Випуск | Том 5, Рік 2013, Номер 2 |
| Дати | Одержано 15.02.2013, у відредагованій формі - 28.04.2013, опубліковано online - 04.05.2013 |
| Посилання | Tanveer A. Dar, Arpana Agrawal, Pratima Sen, J. Nano- Electron. Phys. 5 No 2, 02024 (2013) |
| DOI | |
| PACS Number(s) | 68.55.ag, 73.61.Ga, 79.60.Dp 71.70.Gm |
| Ключові слова | Semiconductors (25) , II–VI semiconductors, Doping (20) , Exchange interactions. |
| Анотація | Structural and optical studies has been done on Nickel doped Zinc Oxide (NixZn1 – xO, x 0.03, 0.05 and 0.07 by weight) thin films prepared by pulsed laser deposition technique. The films are characterized by X-ray diffraction, Uv-vis spectroscopy, X-ray photoelectron spectroscopy. We observed a slight red shift in the optical band gap in the NiZnO subsequent to Ni doping. This shift can be assigned due to the sp-d exchange interaction of Ni- d states with s and p-states of ZnO. Also X-ray photoelectron spectroscopy studies show that Ni has well substituted in + 2 oxidation state by replacing Zn2+. |
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Перелік посилань |
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