Study of Electrical, Optical and Structural Properties of Al- Doped ZnO Thin Films on PEN Substrates
| Автори | Mohit Agarwal, Pankaj Modi, R.O. Dusane |
| Приналежність | Semiconductor Thin Films and Plasma Processing Laboratory, Dept. of Met. Engg. and Matls. Science Indian Institute of Technology Bombay, Powai, 400076 Mumbai, India |
| Е-mail | rodusane@iitb.ac.in |
| Випуск | Том 5, Рік 2013, Номер 2 |
| Дати | Одержано 15.02.2013, у відредагованій формі - 30.04.2013, опубліковано online - 04.05.2013 |
| Посилання | Mohit Agarwal, Pankaj Modi, R.O. Dusane, J. Nano- Electron. Phys. 5 No 2, 02027 (2013) |
| DOI | |
| PACS Number(s) | 68.37.Hk, 78.66.Sq |
| Ключові слова | Al doped ZnO, RF magnetron sputtering (5) . |
| Анотація | Aluminum-doped zinc oxide (AZO), as one of the most promising transparent conducting oxide (TCO) material, has now been widely used in thin film solar cells. Most of the study of AZO films till date has been done on glass substrates but nowadays there is a growing interest in replacing glass with polymer substrate for the thin-film solar cell technology and many other flexible optoelectronic devices. In this study, AZO thin films were deposited at room temperature by RF magnetron sputtering on flexible substrates from a 3 inch diameter target of 2 wt % Al2O3 in zinc oxide. The effect of RF power on the structural, optical and electrical properties of AZO films was investigated by X-ray Diffraction (XRD), Hall measurement, and UV-visible spectrophotometery. The XRD data indicates a preferential c-axis orientation for all the films. All films exhibit high transmittance ( 85%) in visible region. Films deposited at 60 W power exhibit lowest resistivity of 1.2 10 – 3 Ωcm. |
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