Fabrication of CdSe/Si Thin Films Solar Cell by CBD
| Authors | S.A. Najim |
| Affiliations |
University of Mosul, 41002 Mosul, Iraq |
| Е-mail | suhaabdullah@uomosul.edu.iq |
| Issue | Volume 16, Year 2024, Number 3 |
| Dates | Received 19 April 2024; revised manuscript received 20 June 2024; published online 28 June 2024 |
| Citation | S.A. Najim, J. Nano- Electron. Phys. 16 No 3, 03032 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(3).03032 |
| PACS Number(s) | 88.40.H –, 88.40.jm |
| Keywords | Thin films (60) , Solar cells (17) , CdSe heterojunction, Nanostructures (8) . |
| Annotation |
Silicon p-type semiconductor is used to be as absorber layer in solar cell. In this work, the influence of CdSe thicknesses (0.1, 0.5, 1, 1.5, 2, 2.5, 3 nm) on the electrical parameters and the conversion efficiency of CdSe/Si solar cell fabricated by chemical bath deposition have been investigated before and after annealing at 873 K in one hour. It has been found that the short-circuit current density, open-circuit voltage and conversion efficiency increased as CdSe thicknesses increased. The maximum value of efficiency reached approximately 5.31% at 3 nm of CdSe thickness. After annealing, conversion efficiency was improved and it was 8.74%. Additionally, the characteristics of current density voltage solar cell investigated in the dark. The structure of CdSe/Si heterojunction solar cell was crystallized in hexagonal from XRD measurements. It has been found that the intensity for all peaks a decrease after annealing process at a temperature 873 K. |
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List of References |
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