The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications
| Authors | G.A. Kushiev, B.O. Isakov, U.X. Mukhammadjonov |
| Affiliations |
Tashkent State Technical University, 100095 Tashkent, Uzbekistan |
| Е-mail | giyosiddinabdivaxobogli@gmail.com |
| Issue | Volume 16, Year 2024, Number 3 |
| Dates | Received 15 April 2024; revised manuscript received 14 June 2024; published online 28 June 2024 |
| Citation | G.A. Kushiev, B.O. Isakov, U.X. Mukhammadjonov, J. Nano- Electron. Phys. 16 No 3, 03003 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(3).03003 |
| PACS Number(s) | 61.72.uf, 81.05.Cy |
| Keywords | Diffusion (11) , Germanium (3) , Silicon (58) , Manganese, Heterostructures (2) , Elemental Analysis. |
| Annotation |
This study defines the technological procedures for obtaining GexSi1 – x alloys through the diffusion method by introducing germanium atoms into monocrystalline silicon. The research results indicate that the fundamental parameters of the resulting GexSi1 – x alloys differ from the fundamental parameters of the initial silicon, particularly altering the energy values of silicon's forbidden zone. Elemental analysis of the sample surfaces revealed silicon concentration (in atomic percentages) of approximately ~ 70.66 % and germanium ~29.36%. To manufacture and study the parameters of silicon-based solar cells with GexSi1 – x–Si heterostructures, we used samples obtained by two different methods. In the first method, the p-n junction was formed by introducing phosphorus impurity atoms into the original silicon of p-type silicon grade. In the second method, the p-n junction was formed by boron diffusion into the original silicon of SEPH (silicon electronic type, doping material of phosphorus) grade. In both cases, the depth of the p-n junction ranged from 0.5 to 6 m. It was also shown that the binary compounds GexSi1 – x are a new material for modern electronics; the possibility of creating properties in electronics based on them was shown. Based on them, it is proposed to create devices and new functionality and highly efficient solar cells. |
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List of References |
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