Effect of GaSb Compound on Silicon Bandgap Energy

Authors Kh.M. Iliev, N.F. Zikrillaev , K.S. Ayupov, B.O. Isakov , B.A. Abdurakhmanov, Z.N. Umarkhodjaeva, L.I. Isamiddinova

Tashkent State Technical University, 100095 Tashkent, Uzbekistan

Е-mail bobir6422isakov@gmail.com
Issue Volume 16, Year 2024, Number 2
Dates Received 06 December 2023; revised manuscript received 14 April 2024; published online 29 April 2024
Citation Kh.M. Iliev, N.F. Zikrillaev, K.S. Ayupov, et al., J. Nano- Electron. Phys. 16 No 2, 02010 (2024)
DOI https://doi.org/10.21272/jnep.16(2).02004
PACS Number(s) 61.72.uf, 68.43.Jk
Keywords Silicon (58) , Gallium (5) , Antimony (3) , Diffusion (11) , Bandgap Energy.

In this work, the bandgap energy of Si samples doped with impurity atoms of elements Ga (AIII) and Sb (BV) by the diffusion method and without impurity atoms was studied. It is known that the bandgap energies of GaSb and Si semiconductors at room temperature are 0.726 and 1.12 eV, respectively. According to the results of the study, it was found that the band gap energies of Ga and Sb-doped and non-doped Si samples are 1.114 and 1.119 eV, respectively. When the samples were further annealed at a temperature of 600 °C, it was observed that the bandgap energy of the samples doped with Ga and Sb decreased to 1.10 eV.

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