Equivalent Circuit Model to Reach Complicated Surface Photovoltage Transient Shapes in ZnO Thin Films

Authors A. Nadtochiy1, A. Podolian1, O. Korotchenkov1, O. Oberemok2, O. Kosulya2, B. Romanyuk2

1Faculty of Physics, Taras Shevchenko National University of Kyiv, 01601 Kyiv, Ukraine

2V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 03028 Kyiv, Ukraine

Е-mail nadtku@univ.kiev.ua
Issue Volume 16, Year 2024, Number 2
Dates Received 22 January 2024; revised manuscript received 18 April 2024; published online 29 April 2024
Citation A. Nadtochiy1, A. Podolian, J. Nano- Electron. Phys. 16 No 2, 02023 (2024)
DOI https://doi.org/10.21272/jnep.16(2).02023
PACS Number(s) 72.20.Jv, 73.50.Pz
Keywords Surface Photovoltage, Zinc Oxide (10) , Equivalent Circuits.

The dynamics of photoexcited carriers in magnetron sputtered ZnO films is characterized employing time-domain impedance analysis, which is based on the measurements of the surface photovoltage (SPV) transients. The studies focus on observing the damage after the implantation of Nd+ ions in ZnO layers and a subsequent anneal. We observed the positive and negative components of the measured SPV transient and develop equivalent circuits of the structure involving multiple series of parallel resistance (R), capacitance (C), and inductance (L) elements, and derive a simple fitting procedure which allows to reproduce accurately the measured SPV transient. The relationship between these RCL elements and a rough physical picture of the charge transport phenomena in the interface regions of the structure is envisaged. This approach is conceptually useful for characterizing interfaces in semiconductor structures and devices.

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