Fe2O3/p-InSe Heterostructures Produced by Spray Pyrolysis Method

Authors I.G. Orletskii1, I.G. Tkachuk2, 3 , Z.D. Kovalyuk2 , V.I. Ivanov2, A.V. Zaslonkin1

1Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynsky Str., 58012 Chernivtsi, Ukraine

2Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynsky Str., 58012 Chernivtsi, Ukraine

3Institute for Problems of Materials Science, Chernivtsi Branch, 5, I. Vilde Str., 58001 Chernivtsi, Ukraine

Е-mail ivan.tkachuk.1993@gmail.com
Issue Volume 16, Year 2024, Number 2
Dates Received 10 January 2024; revised manuscript received 14 April 2024; published online 29 April 2024
Citation I.G. Orletskii, I.G. Tkachuk, et al., J. Nano- Electron. Phys. 16 No 2, 02007 (2024)
DOI https://doi.org/10.21272/jnep.16(2).02007
PACS Number(s) 73.40. – c, 78.66. – w
Keywords Indium selenide, Hematite, Heterostructures (2) , Spray pyrolysis (9) , I-V characteristics (2) , Photosensitivity.

The method of producing Fe2O3 films on p-InSe substrates by spray-pyrolysis method at 703 K for the formation and investigation of n-Fe2O3/p-InSe anisotype heterojunctions was studied. The advantage of this method is simplicity and cheapness. It does not require complex technological equipment or ultra-clean environments. The electrical and photoelectric parameters of the heterojunctions were investigated. The effect of temperature is studied, and the regularity of the change in the energy barrier of the heterojunction with increasing temperature is given. Based on the analysis of the I-V characteristics, the nature of the currents flowing in the heterojunction was established. To explain the obtained experimental results, an energy diagram of the heterojunction is constructed, which is based on the known numerical values of the energy parameters of the materials from which the heterostructure is made. The experimental data and the proposed energy diagram agree well with each other. The spectral quantum photosensitivity of the heterojunction was measured and analyzed. It was established that n-Fe2O3/p-InSe heterojunctions are photosensitive in the energy range of 1.2÷2.8 eV.

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