Effect of Introduction Layers of Native Oxide, InN, and InSb on the Electrical Characterization of the Au/n-InP

Authors Ali Sadoun

Applied Materials Laboratory, Research Center (CFTE), Sidi Bel Abbès Djillali Liabes University, 22000, Algeria

Е-mail ali.sadoun@dl.univ-sba.dz
Issue Volume 16, Year 2024, Number 2
Dates Received 15 December 2023; revised manuscript received 17 April 2024; published online 29 April 2024
Citation Ali Sadoun, J. Nano- Electron. Phys. 16 No 2, 02001 (2024)
DOI https://doi.org/10.21272/jnep.16(2).02001
PACS Number(s) 00.11.Al, 00.11.Sa
Keywords InP (9) , InN (6) , InSb (2) , Schottky diodes (2) , Current–Voltage, Capacitance–Voltage, Interface state density.

Our study examined how native oxide layers, InN and InSb, affected the current-voltage and capacitance-voltage characteristics of the Au/n-InP Schottky diode at a temperature of 300 K with and without interface states, traps, and tunneling current. The simulation was carried out using the Atlas-Silvaco-Tcad device simulator. From our results, we found that the effective barrier heights were measured to be 0.474 eV, 0.544 eV, and 0.561 eV via I-V measurements and 0.675 eV, 0.817 eV, and 0.80 eV via C-V measurements. Additionally, we utilized the high-low frequency method to calculate the average density of interface state density, which was determined to be approximately 6.03 x 1011 and 3.33 x 1012 сm – 2 x eV – 1. The results indicate that a thin film of InN and InSb can effectively passivate the InP surface, as evidenced by the good performance of the passivized sample.

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